dmn10h120se document number: ds37484 rev. 3 - 2 1 of 6 www.diodes.com january 2015 ? diodes incorporated dmn10h120se new product advanceed information 100v n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c 100v 110m ? @ v gs = 10v 3.6a 122m ? @ v gs = 6.0v 3.4a description this new generation mosfet is designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high-effici ency power management applications. applications ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) mechanical data ? case: sot223 ? case material: molded plastic, ?green? molding compound; ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram below ? terminals: finish - matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.112 grams (approximate) ordering information (note 4) part number qualification case packaging DMN10H120SE-13 standard sot223 2,500/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information top view sot223 d s g equivalent circuit n120se yww pin out - top view = manufacturer?s marking n120se = marking code yww = date code marking y or y= year (ex: 5 = 2015) ww = week (01 - 53) sot223
dmn10h120se document number: ds37484 rev. 3 - 2 2 of 6 www.diodes.com january 2015 ? diodes incorporated dmn10h120se new product advanceed information maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 100 v gate-source voltage v gss 20 v continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 3.6 2.9 a pulsed drain current (10 s pulse, duty cycle Q 1%) i dm 16 a maximum body diode continuous current (note 6) i s 2.5 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 1.3 w (note 6) 2.1 thermal resistance, junction to ambient (note 5) r ? ja 94 c/w (note 6) 58 thermal resistance, junction to case (note 6) r ? jc 8.2 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 100 ? ? v v gs = 0v, i d = 250a zero gate voltage drain current i dss ? ? 1.0 a v ds = 80v, v gs = 0v gate-body leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) 1.5 2.6 3.0 v v ds = v gs , i d = 250a static drain-source on-resistance r ds (on) ? 77 110 m ? v gs = 10v, i d = 3.3a ?? 84 122 v gs = 6.0v, i d = 3.0a diode forward voltage v sd ? 0.8 1.2 ? v v gs = 0v, i s = 3.2a dynamic characteristics (note 8) input capacitance c iss ? 549 ? pf v ds = 50v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 41 ? reverse transfer capacitance c rss ? 19 ? gate resistance r g ?? 1.6 ?? ? vds = 0v, vgs = 0v, f = 1.0mhz total gate charge (v gs = 10v) q g ? 10 ? nc v ds = 50v, i d = 3.3a total gate charge (v gs = 4.5v) q g ? 5.2 ? gate-source charge q gs ? 2.3 ? gate-drain charge q gd ? 2.6 ? turn-on delay time t d(on) ? 3.8 ? ns v dd = 50v, v gs = 10v, r g = 6.0 ? , i d = 3.3a turn-on rise time t r ? 1.8 ? turn-off delay time t d(off) ?? 11 ?? turn-off fall time t f ?? 2.5 ?? reverse recovery time t r r ?? 21 ?? ns v gs = 0v, i s =1.1a, di/dt=100a/s reverse recovery charge q r r ?? 17 ?? nc notes: 5. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to product testing.
dmn10h120se document number: ds37484 rev. 3 - 2 3 of 6 www.diodes.com january 2015 ? diodes incorporated dmn10h120se new product advanceed information v , drain-source voltage (v) ds figure 1 typical output characteristics i , d r a i n c u r r ent (a ) d v = 4. 0v gs v = 3. 5v gs v = 4. 5v gs 0 4 8 12 16 20 00.5 1 1.5 22.5 3 v = 5. 0v gs v = 6. 0v gs v = 10. 0v gs v = 8. 0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t (a) d t = -55c a 0 1 2 3 4 5 6 7 8 9 1 0 1234 56 t = 25c a t = 85c a t = 125c a t = 150c a v = 10.0v ds i , drain-source current d figur e 3 typical on-resistance vs. dr ain cur r ent and gate voltage r , d r a i n- s o u r c e o n- r e s i s t a n c e () ds(o n) ? 0.04 0.05 0.06 0.07 0.08 0.09 0.1 12 34 56 7 8 910 v = 10v gs v = 6v gs v , gate-source voltage (v) gs figur e 4 typical tr ansfer character istics r , d r a i n- s o u r c e o n- r es i st a n c e ( ) ds(o n) ? 0 0.1 0.2 0.3 0.4 0.5 2 4 6 8 10 12 14 16 18 20 i = 3.3a d i = 3. 0a d i , drain current (a) d figure 5 typical on-resistance vs. drain curr ent and tem peratur e r , d r ai n - s o u r c e o n - r e s i s t a n c e ( ) ds(o n) ? 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 012345678910 v = 10v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n- s o u r c e ds(on) on-resistance (normalized) 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 v = 5v gs i = 1. 0a d v = 10v gs i = 5a d
dmn10h120se document number: ds37484 rev. 3 - 2 4 of 6 www.diodes.com january 2015 ? diodes incorporated dmn10h120se new product advanceed information t , junction temperature ( c) j ? figur e 7 on- resistance var iation with tem per atur e r , d r a in- s o u r c e on- r e s i s t a n c e () ds(o n) ? 0 0.03 0.06 0.09 0.12 0.15 0.18 -50-25 0255075100125150 v = 5v gs i = 1. 0a d v = 10v gs i = 5a d t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature v , g a t e t h r e s h o ld v o l t a g e ( v ) gs ( t h) 1 1.5 2 2.5 3 3. 5 -50 - 25 0 25 50 75 100 125 150 i = 250a d i = 1ma d v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r ent ( a ) s t = 25c a 0 1 2 3 4 5 6 7 8 9 10 0 0.3 0.6 0.9 1.2 1.5 t = 25c a t = 125c a t = 150c a t = 25c a t = 25c a t = 85c a t = 25c a t = 25c a t = -55c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e (p f ) t 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 c rss c oss c iss f = 1mhz q , total gate charge (nc) g figur e 11 gate charge v g a t e t h r e s h o ld v o l t a g e (v) gs 0 2 4 6 8 10 024681012 v = 50v ds i = 3. 3a d v , drain-source voltage (v) ds figur e 12 soa, safe oper ation area i , d r ai n c u r r e n t ( a ) d 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 r ds(on) limit ed p = 100s w dc p = 1ms w p = 10ms w p = 100ms w p = 1s w p = 10s w t = 150c j(max) t = 25c a v = 10v gs single pulse dut on 1 * mrp board
dmn10h120se document number: ds37484 rev. 3 - 2 5 of 6 www.diodes.com january 2015 ? diodes incorporated dmn10h120se new product advanceed information t1, pulse duration time (sec) figure 13 transient therm al resistance r (t ), trans ient the rmal resis tance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = single pulse d = 0. 005 d = 0. 01 d = 0. 02 d = 0. 05 d = 0. 1 d = 0. 3 d = 0. 5 d = 0. 7 d = 0. 9 r (t) = r(t) * r thja thja r = 93c/w thja duty cycle, d = t1/ t2 package outline dimensions & suggested pad layout please see ap02002 at http://www.diodes.com/ datasheets/ap02002.pdf for the latest version. sot223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3.50 e1 6.90 7.10 7.00 e - - 4.60 e1 - - 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm a1 a 7 7 d b e e1 b1 c e1 l 0 - 1 0 q e 0.25 seating plane gauge plane
dmn10h120se document number: ds37484 rev. 3 - 2 6 of 6 www.diodes.com january 2015 ? diodes incorporated dmn10h120se new product advanceed information suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2015, diodes incorporated www.diodes.com dimensions value (in mm) c 2.30 c1 6.40 x 1.20 x1 3.30 y 1.60 y1 1.60 c2 8.00 ; < < ; & & <
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